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| BCR8PM-12LE Triac Medium Power Use REJ03G1259-0100 Rev.2.00 Jul 28, 2006 Features * * * * IT (RMS) : 8 A VDRM : 600 V IFGTI, IRGTI, IRGTIII : 30 mA Viso : 1500 V * Insulated Type * Planar Passivation Type * UL Applying Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, and carpet, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 700 Unit V V Rev.2.00 Jul 28, 2006 page 1 of 7 BCR8PM-12LE Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 8 80 26 5 0.5 10 2 - 40 to +125 - 40 to +125 2.0 1500 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 82C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) Min. -- -- -- -- -- -- -- -- 0.2 -- Typ. -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 30 30 30 -- 4.3 Unit mA V V V V mA mA mA V C/W Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 12 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance (dv/dt)c 10 -- -- V/s Tj = 125C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 4.0 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.2.00 Jul 28, 2006 page 2 of 7 BCR8PM-12LE Performance Curves Maximum On-State Characteristics 10 7 5 3 2 101 7 5 3 2 10 7 5 3 2 10 -1 0 2 Rated Surge On-State Current 100 Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 00 10 23 5 7 10 1 On-State Current (A) Tj = 125C Tj = 25C 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 23 5 7 10 2 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) 3 2 VGM = 10 V Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 IRGT III Typical Example PG(AV) = 0.5 W PGM = 5 W IGM = 2 A Gate Voltage (V) 101 7 5 3 2 100 7 5 3 2 10 -1 VGT = 1.5 V 102 IRGT I, IFGT I 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 IFGT I IRGT I, IRGT III VGD = 0.2 V 7 5 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 -60 -40-20 0 20 40 60 80 100 120 140 1 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 2 3 5 7103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 3 Typical Example Junction Temperature (C) Conduction Time (Cycles at 60Hz) Rev.2.00 Jul 28, 2006 page 3 of 7 BCR8PM-12LE Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 16 Transient Thermal Impedance (C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 1 3 On-State Power Dissipation (W) No Fins 14 12 360 Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 12 14 16 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 2 3 4 5 Conduction Time (Cycles at 60 Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection Ambient Temperature (C) Case Temperature (C) 140 120 100 80 60 40 140 120 100 80 60 40 20 0 0 2 4 360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 10 -60 -40-20 0 20 40 60 80 100 120 140 2 Typical Example Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) Junction Temperature (C) Rev.2.00 Jul 28, 2006 page 4 of 7 BCR8PM-12LE Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 103 7 5 3 2 102 7 5 3 2 101 -60 -40-20 0 20 40 60 80 100 120 140 Typical Example 103 7 5 3 2 102 7 5 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Distribution T2+, G- Typical Example 101 7 5 3 ++ 2 T2-, G- Typical Example T2 , G 100 -40 0 40 80 120 160 Junction Temperature (C) Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 I Quadrant III Quadrant Typical Example Tj = 125C 140 120 100 80 60 40 20 0 -60 -40-20 0 20 40 60 80 100 120 140 01 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics Critical Rate of Rise of Off-State Commutating Voltage (V/s) 7 5 3 2 1 Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) 10 7 5 3 2 102 7 5 3 2 10 0 10 1 3 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 10 7 5 Minimum Characteristics 3 2 Value Typical Example Tj = 125C IT = 4 A = 500 s VD = 200 V f = 3 Hz Typical Example IFGT I IRGT I IRGT III I Quadrant III Quadrant 100 70 10 23 5 7 101 23 5 7 102 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Rev.2.00 Jul 28, 2006 page 5 of 7 BCR8PM-12LE Gate Trigger Characteristics Test Circuits 6 6 6V V A 330 6V V A 330 Test Procedure I 6 Test Procedure II 6V V A 330 Test Procedure III Rev.2.00 Jul 28, 2006 page 6 of 7 BCR8PM-12LE Package Dimensions Package Name TO-220F(2) JEITA Package Code SC-67 RENESAS Code PRSS0003AA-B Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 5.0 1.2 17 3.2 0.2 13.5Min 3.6 1.3Max 0.8 2.54 2.54 8.5 0.5 2.6 Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR8PM-12LE BCR8PM-12LE-A8 Straight type Vinyl sack 100 Type name Lead form Plastic Magazine (Tube) 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Jul 28, 2006 page 7 of 7 4.5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
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